> Web Coaters
   Sputtering
   Electron Beam

> Custom Systems

> NEW! Replicated Systems
   SCT-5000  (CHA Mark-50)
   SCT-600  (CHA 600)
   SCT-1000  (CHA 1000)
   SCT-2550  (VES-2550)
   SCT-1800  (BJD, FC & MRC Series)
   SCT Axis Series

> Remanufactured Systems

> Fixtures & Components

LOWER PRODUCTION COSTS

Higher target utilization
(>90% compared with <30%).

No race track on target

Sputter from thick ferromagnetic
targets (>6mm).

Increased plant uptime - fewer
target changes

Cost savings on target waste

High deposition rate - even on
dielectric materials

Improved product quality.

Variable deposition rates in
same plant.

HIGHER FILM QUALITY

Plasma beam directed towards target

Patented system generates the plasma remotely from the target

Independence of target voltage
and target current enables variable deposition rates without affecting film properties

Deposition from a flat surface
throughout the process giving better stoichiometry from alloy targets

Demonstrated capability to
grow small grain chromium (<10nm)

High uniformity of film
thickness

Excellent magnetic properties

NEW! High Density RF Plasma Deposition System
This system incorporates patented plasma launch technology to generate a high density, highly energetic gas plasma. The technology allows high deposition rate, high yield sputtering of a range of elements, compounds and alloys, including the notoriously difficult ferromagnetic and dielectric materials. The system is also capable of very low rate deposition, while still maintaining excellent control of the product’s properties and characteristics.

Capable of generating stable plasma densities from 10¹⁰ to in excess of 10¹³ cm^-3, ideally suited for plasma assisted deposition. SCT utilizes patented high density plasma deposition systems for
applications including:

Photovoltaics
Optical Telecoms
Semiconductors
Media Storage and Retrieval
Precision Optics
Research and Development

The systems are compact and can be customized to provide:

- Up to 6 targets
- Multiple substrates
- High uniformity
- Computer controlled recipes
- Substrate cleaning in situ
- UHV
- Load lock
- Substrate heating
- Substrate plasma clean

Dimensions: 570mm x 420mm
RF Power Source 2.5Kw to5Kw
Rack mounted controls

Reactively deposited materials include:
Alumina @ >300nm/min
Silica >150nm/min, RI : 1.46 – 1.5
Tantalum >220nm/min, RI : 2.1
Fe3O4 (reactively sputtered)
600mm substrate coated from 100mm targets with high
uniformity
High value coatings onto refractory discs
Titanium dioxide coated onto organic substrates

Process Characteristics:
Low stress < 10Mpa
Dense films
Stable process: no feedback control
Low optical absorption
Grain size 3.6nm
Roughness 0.5nm
High rate from thick ferromagnetic targets
Control of magnetic properties
Control of deposition rates
Low film porosity
Excellent film adhesion and low stress